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SRFET
TM
AOL1704 N-Channel Enhancement Mode Field Effect Transistor
TM
General Description
SRFET AOL1704 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AOL1704 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V ID =50A (VGS = 10V) RDS(ON) < 7.8m (VGS = 10V) RDS(ON) < 9.8m (VGS = 4.5V)
UIS Tested! Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View D Bottom tab connected to drain G
G S
Fits SOIC8 footprint !
D
SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode
S
Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain B Current Pulsed Drain Current Continuous Drain H Current Avalanche Current
C C
Maximum 30 12 50 43 120 18 14 25 94 50 25 4.3 2.8 -55 to 175
Units V V A
TC=25C
I
TC=100C TA=25C TA=70C
ID IDM IDSM IAR EAR PD PDSM TJ, TSTG
A A mJ W W C
Repetitive avalanche energy L=0.3mH TC=25C Power Dissipation B Power Dissipation
A
TC=100C TA=25C TA=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case C
Symbol
A A
t 10s Steady-State Steady-State
RJA RJC
Typ 24 53 2.4
Max 29 64 3.0
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1704
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Diode Continuous Current I Conditions ID=250uA, V GS=0V VDS=24V, V GS=0V TJ=125C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=20A TJ=125C 1.4 120 6.5 9.2 8 95 0.36 0.5 50 2800 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 390 145 0.8 42 VGS=10V, VDS=15V, ID=20A 19 7 6 7 VGS=10V, V DS=15V, R L=0.75, RGEN=3 IF=20A, dI/dt=300A/s IF=20A, dI/dt=300A/s 7 31 5 13 12 16 1.2 50 23 nC nC nC ns ns ns ns ns nC 3640 7.8 11.5 9.8 1.8 Min 30 0.04 5 0.1 20 0.1 2.4 Typ Max Units V mA A V A m m S V A pF pF pF
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of RJA is measured with the device in a still air environment with TA =25C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150C, using t 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The RJA is the sum of the thermal impedence from junction to case R and case to ambient. JC E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. I. The maximum current rating is limited by bond-wires. Rev1: Oct. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120 10V 90 6V 4.5V 3.5V 60 ID(A) 15 10 VGS=3.0V 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 12 11 Normalized On-Resistance 10 RDS(ON) (m) 9 8 7 6 5 4 0 10 20 30 40 50 60 0.8 0 30 60 90 120 150 180 210 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 16 ID=20A 14 12 10 8 6 4 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C IS (A) 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics VGS=10V VGS=4.5V 1.6 5 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 1.8 ID=20A VGS=10V 4.0V 25 20 ID (A) 125 25C 30 30 VDS=5V
1.4 1.2
VGS=4.5V
1
1.0E+02 1.0E+01 1.0E+00 125C 25C
RDS(ON) (m)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 4.50E-09 4.00E-09 Capacitance (nF) VDS=15V ID=20A 3.50E-09 3.00E-09 2.50E-09 2.00E-09 1.50E-09 1.00E-09 5.00E-10 0.00E+00 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss Ciss
1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 TJ(Max)=175C TC=25C RDS(ON) limited 10s 100s 1ms DC 10ms Power (W)
120 110 100 90 80 70 60 50 10 100 40 0.01 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 0.1 TJ(Max)=175C TC=25C
0.1
1 VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
10 ZJC Normalized Transient Thermal Resistance D=T on/T TJ,PK=T C+PDM.ZJc.RJc RJC=3C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD Single Pulse Ton T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120 ID(A), Peak Avalanche Current Power Dissipation (W) 100 80 60 40 20 0 1.0E-07 TC=25C 60 50 40 30 20 10 0 1.0E-06 1.0E-05 1.0E-04 1.0E-03 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B)
TC=150C
Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability
60 50 Current rating ID(A) 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Power (W)
160 140 120 100 80 60 40 20 0 0.001 0.01 0.1 1 10 100 1000 TJ(Max)=150C TA=25C
Pulse Width (s) Figure15: Single Pulse Power Rating Junction-toAmbient (Note G)
10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.1 PD 0.01 Single Pulse D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=64C/W 0.01 0.1 1 Ton
T 100 1000
0.001 0.00001
0.0001
0.001
10
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01 1 0.9 1.0E-02 VDS=24V IR (A) 1.0E-03 VDS=12V 1.0E-04 VSD(V) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1.0E-05 0 100 150 200 Temperature (C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 18 di/dt=1000A/us 40 32 Qrr (nC) 24 16 8 0 15 20 25 30 Is (A) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 40 Is=20A 32 25C 24 125C 16 Qrr 8 0 0 Irm 25C 3 0 600 800 1000 1200 di/dt (A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. di/dt 200 400 6 125C 12 9 16 14 25C 15 18 125C Is=20A 2.00 1.50 trr S 1.00 0.50 0.00 1200 S 400 600 800 1000 0 5 10 Irm 25C 125C 25C Qrr 125C 6 3 0 15 12 Irm (A) 9 12 11 10 trr (ns) 9 8 7 6 5 4 0 5 10 15 20 25 30 Is (A) Figure 20: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current 125C S 25C trr 50 0 0 100 150 200 Temperature (C) Figure 18: Diode Forward voltage vs. Junction Temperature 2.40 125C 25C 2.10 1.80 1.50 1.20 0.90 0.60 0.30 0.00 S 50 IS=1A 20A 10A 5A
48
di/dt=1000A/us
2.50
Irm (A)
Qrr (nC)
trr (ns)
12 10 8 6 4 0 200 25C 125C
di/dt (A) Figure 22: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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